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Item hits:
Issue Date
Title
Author(s)
2010
Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
Srivastava, Viranjay M.
;
Singh, G.
;
Yadav, K.S.
2012
Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch
Srivastava, Viranjay M.
;
Yadav, K.S
;
Singh, G.
2010
Measurement of Oxide Thickness for MOS Devices, Using Simulation of SUPREM Simulator
Srivastava, Viranjay M.
;
Singh, G.
;
Yadav, K.S.
2012
Optimization of drain current and voltage characteristics for DP4T double-gate RF CMOS switch at 45-nm technology
Srivastava, Viranjay M.
;
Yadav, K.S
;
Singh, G.
Discover
Author
4
Srivastava, Viranjay M.
2
Yadav, K.S
2
Yadav, K.S.
Subject
2
CMOS
1
45-nm Nanotechnology
1
45-nm technology
1
Capacitance-voltage curves
1
LCR Meter
1
LCR meter
1
MOS device
1
Oxide thickness measurement
1
Radio frequency
1
Sngle gate MOSFAT
.
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Date issued
2
2010
2
2012