Please use this identifier to cite or link to this item:
http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9255| Title: | Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch |
| Authors: | Srivastava, Viranjay M. Yadav, K.S Singh, G. |
| Keywords: | 45-nm technology Sngle gate MOSFAT CMOS VLSI |
| Issue Date: | 2012 |
| Publisher: | Jaypee University of Information Technology, Solan, H.P. |
| URI: | http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9255 |
| Appears in Collections: | Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch.pdf | 3.91 MB | Adobe PDF | View/Open |
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