Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9180
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dc.contributor.authorAmbika-
dc.contributor.authorBarman, P.B.-
dc.date.accessioned2023-01-13T10:11:46Z-
dc.date.available2023-01-13T10:11:46Z-
dc.date.issued2009-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9180-
dc.description.abstractPhotoconductive properties of a-Se85-xTe15Bix (where x = 0, 1, 2, 3, 4, 5) glassy thin films prepared by vacuum evaporation technique are recorded at room temperature (303 K) using Keithley 6487 picoammeter. Temperature dependent dark conductivity is studied in the temperature range 303-333 K and it shows that conduction for the studied composition is through an activated process, having single activation energy. Optical band gap (Eg) as determined from Tauc extrapolation method is found to follow the similar trend as that of dark activation energy (ΔEd) except for Bi = 1 at. %. The decay of photocurrent with time is also studied for the samples. The differential life time τd as determined from the decay of photocurrent w.r.t. time is found to increase with increasing Bi content.en_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectChalcogenide glassesen_US
dc.subjectDark conductivityen_US
dc.subjectTransient photoconductivityen_US
dc.titleTransient Photoconductivity of Amorphous Se85-XTe15Bix Thin Filmsen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles

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