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DC Field | Value | Language |
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dc.contributor.author | Dutta, D. | - |
dc.contributor.author | Hazra, S.k. | - |
dc.contributor.author | Das, J. | - |
dc.contributor.author | Sarkar, C.k. | - |
dc.contributor.author | Basu, S. | - |
dc.date.accessioned | 2023-01-13T08:52:31Z | - |
dc.date.available | 2023-01-13T08:52:31Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/9160 | - |
dc.description.abstract | In atmospheric-pressure chemical vapor deposition-grown multilayer graphene films, a reversible change from n- to p-type conductivity has been observed in the temperature range of 25 C to 150 C upon exposure to hydrogen. This study was conducted with a simple Pd/graphene/Pd planar device. The inversion was observed at around 100 C, below which it showed stable n-type response to hydrogen. The hydrogen response was quite fast (1 s to 2 s) at 150 C. A plausible mechanism has been developed to explain such inversion. The selectivity and stability of the device in both n- and p-regions were investigated in the temperature range of 25 C to 150 C. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Jaypee University of Information Technology, Solan, H.P. | en_US |
dc.subject | Multilayer graphene | en_US |
dc.subject | CVD growth | en_US |
dc.subject | Reversible response | en_US |
dc.title | Temperature- and Hydrogen-Gas-Dependent Reversible Inversion of n-/p-Type Conductivity in CVD-Grown Multilayer Graphene (MLG) Film | en_US |
dc.type | Article | en_US |
Appears in Collections: | Journal Articles |
Files in This Item:
File | Description | Size | Format | |
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Temperature-and Hydrogen-Gas-Dependent Reversible Inversion of n-p-Type Conductivity in CVD-Grown Multilayer Graphene (MLG) Film.pdf | 1.15 MB | Adobe PDF | View/Open |
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