Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8937
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dc.contributor.authorKumar, Hitanshu-
dc.contributor.authorBarman, P.b.-
dc.contributor.authorSingh, Ragini Raj-
dc.date.accessioned2023-01-04T06:58:32Z-
dc.date.available2023-01-04T06:58:32Z-
dc.date.issued2015-
dc.identifier.urihttp://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8937-
dc.description.abstractA novel low-temperature wet chemical method is proposed for direct growth of type-I inverted hexagonal ZnS/CdS quantum dots (QD). 2-Mercaptoethanol (2-ME) was used as a capping agent for confinement by passivation, and also helped to prevent agglomeration of the QD. The band gap calculated from optical absorption spectra was 2.63 eV for the smallest core/shell QD. Absorption edge onset and results from transmission electron microscopy revealed formation of inverted core/shell QD. X-ray diffraction studies revealed the ZnS/CdS had a stable hexagonal crystal structure at low temperature. The average diameter of the core/shell QD was 4.2 nm. Tunable luminescence with substantial tunability was revealed by study of the photoluminescence of the inverted ZnS/CdS quantum dots. Surface passivation of ZnS/CdS QD by 2-ME was confirmed by Fourier-transform infrared spectroscopen_US
dc.language.isoenen_US
dc.publisherJaypee University of Information Technology, Solan, H.P.en_US
dc.subjectQuantum dotsen_US
dc.subjectShell structuresen_US
dc.subjectluminescenceen_US
dc.subjectFTIRen_US
dc.subjectElectron microscopyen_US
dc.titleLow-Temperature Growth of Inverted Hexagonal ZnS/CdS Quantum Dots: Functional and Luminescence Propertiesen_US
dc.typeArticleen_US
Appears in Collections:Journal Articles



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