Influence of Composition on the Optical Band Gap In a-ge20se80-xinx Thin Films

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DC Field	Value	Language
dc.contributor.author	Ishu	-
dc.contributor.author	Tripathia, S. K.	-
dc.contributor.author	Barman, P. B.	-
dc.date.accessioned	2022-12-28T09:00:58Z	-
dc.date.available	2022-12-28T09:00:58Z	-
dc.date.issued	2006	-
dc.identifier.uri	http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8749	-
dc.description.abstract	Thin films of Ge10Se80-xInx (x = 0, 5, 10, 15, 20) bulk material were prepared by thermal evaporation technique at a base pressure of ~10-6 mbar. Amorphous nature of the bulk and deposited thin films was confirmed by x-ray diffraction technique. Optical transmission spectra of the films were taken in the range of 400-1200 nm. The optical band gap was determined and the variation in the band gap is explained in terms of average bond energy of the system.	en_US
dc.language.iso	en	en_US
dc.publisher	Jaypee University of Information Technology, Solan, H.P.	en_US
dc.subject	Chalcogenide glasses	en_US
dc.subject	Absorption coefficient	en_US
dc.subject	Optical band gap	en_US
dc.subject	Average bond energy	en_US
dc.title	Influence of Composition on the Optical Band Gap In a-ge20se80-xinx Thin Films	en_US
dc.type	Article	en_US
Appears in Collections:	Journal Articles

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