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Title: | Influence of Composition on the Optical Band Gap In a-ge20se80-xinx Thin Films |
Authors: | Ishu Tripathia, S. K. Barman, P. B. |
Keywords: | Chalcogenide glasses Absorption coefficient Optical band gap Average bond energy |
Issue Date: | 2006 |
Publisher: | Jaypee University of Information Technology, Solan, H.P. |
Abstract: | Thin films of Ge10Se80-xInx (x = 0, 5, 10, 15, 20) bulk material were prepared by thermal evaporation technique at a base pressure of ~10-6 mbar. Amorphous nature of the bulk and deposited thin films was confirmed by x-ray diffraction technique. Optical transmission spectra of the films were taken in the range of 400-1200 nm. The optical band gap was determined and the variation in the band gap is explained in terms of average bond energy of the system. |
URI: | http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8749 |
Appears in Collections: | Journal Articles |
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File | Description | Size | Format | |
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Influence of composition on the optical band gap in A-Ge20Se80-XInX thin films.pdf | 213.93 kB | Adobe PDF | View/Open |
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