Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8749
Title: Influence of Composition on the Optical Band Gap In a-ge20se80-xinx Thin Films
Authors: Ishu
Tripathia, S. K.
Barman, P. B.
Keywords: Chalcogenide glasses
Absorption coefficient
Optical band gap
Average bond energy
Issue Date: 2006
Publisher: Jaypee University of Information Technology, Solan, H.P.
Abstract: Thin films of Ge10Se80-xInx (x = 0, 5, 10, 15, 20) bulk material were prepared by thermal evaporation technique at a base pressure of ~10-6 mbar. Amorphous nature of the bulk and deposited thin films was confirmed by x-ray diffraction technique. Optical transmission spectra of the films were taken in the range of 400-1200 nm. The optical band gap was determined and the variation in the band gap is explained in terms of average bond energy of the system.
URI: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8749
Appears in Collections:Journal Articles

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