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http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8674| Title: | Effect of Substitutional Doping on Temperature Dependent Electrical Parameters of Amorphous Se-Te Semiconductors |
| Authors: | Sharma, Neha Sharda, Sunanda Sharma, Dheeraj Sharma, Vineet Barman, P.B. Katyal, S.C. Sharma, Pankaj Hazra, S. K. |
| Keywords: | Amorphous materials Electrical properties Defects |
| Issue Date: | 2013 |
| Publisher: | Jaypee University of Information Technology, Solan, H.P. |
| Abstract: | Steady state current-voltage characteristics of the amorphous (Se80Te20)98Y2 (Y = Ag, Bi, Ge, Cd) semiconductors at different temperatures are reported. The measurements were performed using direct-current voltage bias to understand the basic conductivity mechanism and to evaluate the impact of each substituent on electrical response. The space charge limited conduction mechanism, and the density of states near Fermi level have been calculated. The difference in electrical response due to different substitutions in the glassy matrix is analyzed. |
| URI: | http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/8674 |
| Appears in Collections: | Journal Articles |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Effect of substitutional doping on temperature dependent electrical parameters of amorphous Se-Te semiconductors.pdf | 683.64 kB | Adobe PDF | View/Open |
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