Investigation of Amorphous GeTeSeGa Chalcogenides For Physical Structural Optical and Thermal Properties

Abstract

The amorphous chalcogenides are useful in optoelectronic and IR applications because of their unique properties i.e., higher linear and non- linear refractive index, lower phonon energy and IR transparency up to far-IR region. Tellurium based gallium doped chalcogenides possess more thermal stability and high refractive index as compared to others. The bulk GeTeSeGa chalcogenides are prepared by traditional melt quenching approach. However, thin films are deposited on glass substrates by thermal evaporation method. With the rise of Ga content in the material, red shift in the wavelength is observed. The value of refractive index increases from 4.11 to 5.69 at 1μm while the value of optical band gap decreases from 0.952 eV to 0.790 eV with the Ga content. Further, with the inclusion of Ga the stability parameter ∆T increases which leads to the improvement of thermal stability of prepared glassy matrix. The GeTeSeGa system may be suitable in NIR imaging, IR detectors, optoelectronic and optical fiber applications.