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http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/6470
Title: | To Improve the Performance Of MOSFET |
Authors: | Gaba, Palak Agarwal, Ankit Jain, Aashna Ranjan, Akhil [Guided by] |
Keywords: | MOSFET Graphene Band gap formation |
Issue Date: | 2015 |
Publisher: | Jaypee University of Information Technology, Solan, H.P. |
Abstract: | A Metal Oxide Semiconductor Field Effect Transistor is a transistor used for amplifying or switching electronic signals. The body of a MOSFET is usually connected to the source terminal which makes it a three-terminal device similar to other Field Effect Transistors (FET). The MOSFET (metal oxide semiconductor field-effect transistor) is by far the most common semiconductor device, and the primary building block in all commercial processors, memories, and digital integrated circuits. Since the first microprocessors were introduced approximately 40 years ago this device has experienced tremendous development, and today it is being manufactured with feature sizes of 22 nm and smaller. The MOS Field Effect Transistor is also the fundamental building block of MOS and CMOS digital integrated circuits. Compared to the bipolar junction transistor (BJT), the MOS transistor occupies a relatively smaller silicon area, and its fabrication involves fewer processing steps. The NMOS transistor is used as the primary switching device in virtually all digital circuit applications, whereas the PMOS transistor is used mostly in conjunction with the NMOS device in CMOS circuits. |
URI: | http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/6470 |
Appears in Collections: | B.Tech. Project Reports |
Files in This Item:
File | Description | Size | Format | |
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To Improve the Performance Of MOSFET.pdf | 3.01 MB | Adobe PDF | View/Open |
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