Please use this identifier to cite or link to this item: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/6470
Title: To Improve the Performance Of MOSFET
Authors: Gaba, Palak
Agarwal, Ankit
Jain, Aashna
Ranjan, Akhil [Guided by]
Keywords: MOSFET
Graphene
Band gap formation
Issue Date: 2015
Publisher: Jaypee University of Information Technology, Solan, H.P.
Abstract: A Metal Oxide Semiconductor Field Effect Transistor is a transistor used for amplifying or switching electronic signals. The body of a MOSFET is usually connected to the source terminal which makes it a three-terminal device similar to other Field Effect Transistors (FET). The MOSFET (metal oxide semiconductor field-effect transistor) is by far the most common semiconductor device, and the primary building block in all commercial processors, memories, and digital integrated circuits. Since the first microprocessors were introduced approximately 40 years ago this device has experienced tremendous development, and today it is being manufactured with feature sizes of 22 nm and smaller. The MOS Field Effect Transistor is also the fundamental building block of MOS and CMOS digital integrated circuits. Compared to the bipolar junction transistor (BJT), the MOS transistor occupies a relatively smaller silicon area, and its fabrication involves fewer processing steps. The NMOS transistor is used as the primary switching device in virtually all digital circuit applications, whereas the PMOS transistor is used mostly in conjunction with the NMOS device in CMOS circuits.
URI: http://ir.juit.ac.in:8080/jspui/jspui/handle/123456789/6470
Appears in Collections:B.Tech. Project Reports

Files in This Item:
File Description SizeFormat 
To Improve the Performance Of MOSFET.pdf3.01 MBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.